| PART |
Description |
Maker |
| 82S131 N82S131A N82S130N N82S131N N82S130A N82S131 |
V(cc): 7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion
2K-bit TTL bipolar PROM 512 X 4 OTPROM, 50 ns, PDIP16
|
List of Unclassifed Manufacturers
Philips Semiconductors
ETC
Electronic Theatre Controls, Inc.
NXP Semiconductors N.V.
|
| AM27S33 |
4096 bit Bipolar PROM
|
Advanced Micro Devices
|
| SRI4K11 SRI4K SRI4K-SBN18/1GE |
4096-bit ISO14443-B contactless memory with 2 binary counters and anti-collision
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM and anticollision functions
|
ST Microelectronics
STMicroelectronics
|
| ER3400 ER3400IR ER3400HR |
4096 Bit Electrically Alterable Read Only Memory
From old datasheet system
4096 Bit Electrically Alterable ROM
|
List of Unclassifed Manufacturers
ETC[ETC]
General Semiconductor
|
| UPB419C UPB419D |
16384 BIT BIPOLAR TTL
|
NEC
|
| UPB408C UPB408D UPB428C UPB428D |
8192 BIT BIPOLAR TTL
|
NEC
|
| UPB421C UPB421D |
2048 BIT BIPOLAR TTL
|
NEC
|
| N82S183 |
8K-Bit TTL Bipolar PROM
|
NXP
|
| N82S23A |
256-bit TTL bipolar PROM 32 x 8
|
Philips
|
| N74F189AN 74F189 74F189A N74F189AD 74F189A_3 |
From old datasheet system
64-bit TTL bipolar RAM, inverting 3-State
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 4200ACC 4200BCD 4200ACD 4200BCP |
Low-Cost, 2.7V to 5.5V, Micropower Temperature Switches in SOT23 and TO-220 x1同步SRAM
SEMI 4200 150 ns, Static, TTL IN/OUT, 4096 x 1 NMOS RAM
|
EMM Semi, Inc.
|
